Piezoelectric device and method for manufacturing piezoelectric device

ABSTRACT

In a method of manufacturing a piezoelectric device, during an isolation formation step, a supporting substrate has a piezoelectric thin film formed on its front with a compressive stress film present on its back. The compressive stress film compresses the surface on a piezoelectric single crystal substrate side of the supporting substrate, and the piezoelectric thin film compresses the back of the supporting substrate, which is opposite to the surface on the piezoelectric single crystal substrate side. Thus, the compressive stress produced by the compressive stress film and that produced by the piezoelectric thin film are balanced in the supporting substrate, which causes the supporting substrate to be free of warpage and remain flat. A driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a piezoelectric device that includes athin film made of a piezoelectric single crystal material and a methodfor manufacturing this piezoelectric device.

2. Description of the Related Art

Many kinds of piezoelectric devices that utilize a piezoelectric thinfilm, i.e., thin-film piezoelectric devices, are now under development.There are many ways to produce a piezoelectric thin film for thefabrication of thin-film piezoelectric devices. For example, JapaneseUnexamined Patent Application Publication No. 2002-534886 proposes amethod for manufacturing a piezoelectric device in which a piezoelectricthin film is formed by isolation from a piezoelectric substrate at anion-implanted layer as the isolation plane.

The following describes this manufacturing method of a piezoelectricdevice, which includes forming a piezoelectric thin film by isolationfrom a piezoelectric substrate at an ion-implanted layer as theisolation plane, with reference to FIGS. 1A-1D.

FIGS. 1A-1D are schematic cross-sectional diagrams illustrating themanufacturing steps of a piezoelectric device according to JapaneseUnexamined Patent Application Publication No. 2002-534886. The firststep is to implant hydrogen ions into a piezoelectric substrate 5 fromthe front 7 side such that an ion-implanted layer 6 is formed at apredetermined depth d in the piezoelectric substrate 5 as illustrated inFIG. 1A. A coupling material 8 is then deposited on the front 7 of thepiezoelectric substrate 5 by sputtering as illustrated in FIG. 1B. Thenext step is to join the piezoelectric substrate 5 and a supportingsubstrate 9 as illustrated in FIG. 1C. Finally, the joined body of thepiezoelectric substrate 5 and the supporting substrate 9 is heated toinitiate isolation at the ion-implanted layer 6 as the isolation plane.As a result, a piezoelectric thin film 5′ is formed on the supportingsubstrate 9 as illustrated in FIG. 1D.

In the manufacturing method according to Japanese Unexamined PatentApplication Publication No. 2002-534886, however, ion implantation (seeFIG. 1A) causes the piezoelectric substrate 5 warped with theion-implanted layer 6 side of the piezoelectric substrate 5 to be curvedoutwards as illustrated in FIG. 2A. This type of warpage occurs becausethe implanted ionized element causes the crystal lattice spacing of thepiezoelectric material to extend in the ion-implanted portion of thepiezoelectric substrate 5.

When the piezoelectric substrate 5 is in such a warped shape, bonding itto a supporting substrate 9 (see FIG. 1C) results in the piezoelectricmaterial existing on the surface 7 on the ion-implanted layer 6 sideadhering to the supporting substrate 9 with its crystal lattice spacinglonger than that before ion implantation. Isolation at the ion-implantedlayer after bonding to the supporting substrate 9 therefore causes thepiezoelectric thin film 5′ to produce a compressive stress thatcompresses the back 4 of the supporting substrate 9, which is oppositeto the surface on the piezoelectric thin film 5′ side, making thesupporting substrate 9 after isolation warped with the piezoelectricthin film 5′ side curved outwards as illustrated in FIG. 2B.

This means that piezoelectric thin film devices produced by themanufacturing method according to Japanese Unexamined Patent ApplicationPublication No. 2002-534886 are disadvantageous because the compressivestress exerted on the isolation plane during this isolation operationleads to a degraded surface roughness of the piezoelectric thin film 5′.Worse yet, this compressive stress is localized in the isolation plane,and the supporting substrate 9 after isolation is likely to crack.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide a piezoelectricdevice free of the problems associated with ion implantation, i.e., thedegradation of the surface roughness of the piezoelectric thin film andthe cracking of the supporting substrate, and a method for manufacturingthis piezoelectric device.

A piezoelectric device according to a preferred embodiment of thepresent invention includes a support, a piezoelectric single crystalthin film located on the support and formed by isolation from apiezoelectric single crystal substrate containing an ionized elementimplanted thereinto at a concentration peak of the implanted element asan isolation plane, an electrode film located on the piezoelectricsingle crystal thin film, and a stress layer arranged to cause a surfaceon the piezoelectric single crystal thin film side of the support tocontract.

In this configuration, the stress layer causes the surface on thepiezoelectric single crystal thin film side of the support to contract.In other words, the contraction stress produced by the stress layer andthe compressive stress produced by the piezoelectric single crystal thinfilm are in balance in the support.

To this end, this piezoelectric device according to a preferredembodiment of the present invention is produced by a process includingan isolation formation step in which a piezoelectric single crystal thinfilm is formed on the support by isolation from a piezoelectric singlecrystal substrate containing an ionized element implanted thereinto atthe concentration peak of the implanted element as the isolation plane.The driving force that induces isolation in this step is thereforegasification of the implanted ionized element rather than thecompressive stress to the isolation plane produced by the piezoelectricsingle crystal thin film. This prevents the degradation of the surfaceroughness of the piezoelectric single crystal thin film. Furthermore,the compressive stress produced by the piezoelectric single crystal thinfilm is no longer localized in the isolation plane, and the cracking ofthe support that could occur after isolation is prevented.

The manufacturing method of a piezoelectric device configured in thisway is therefore free of the degradation of the surface roughness of thepiezoelectric single crystal thin film and the cracking of the support.

The stress layer preferably is a compressive stress film located on theback side of the support, which is opposite to the surface on thepiezoelectric single crystal thin film side, to compress the surface onthe piezoelectric single crystal thin film side of the support.

In this configuration, the compressive stress film compresses thesurface on the piezoelectric single crystal thin film side of thesupport. In other words, the compressive stress produced by thecompressive stress film and that produced by the piezoelectric singlecrystal thin film are in balance in the support.

The compressive stress film preferably is made of silicon oxide, siliconnitride, zinc oxide, tantalum oxide, aluminum nitride, or aluminumoxide, for example.

The stress layer is a tensile stress film located between thepiezoelectric single crystal thin film and the support to pull thepiezoelectric single crystal thin film.

In this configuration, the tensile stress film pulls the piezoelectricsingle crystal thin film to compress the surface on the piezoelectricsingle crystal thin film side of the support. In other words, thetensile stress produced by the tensile stress film and the compressivestress by the piezoelectric single crystal thin film are in balance inthe support.

The tensile stress film is preferably made of silicon oxide, siliconnitride, aluminum nitride, or aluminum oxide, for example.

The support preferably includes a supporting layer arranged to supportthe piezoelectric single crystal thin film and a void layer locatedbetween the piezoelectric single crystal thin film and the compressivestress film.

In this configuration, the tensile stress film compresses the surface onthe piezoelectric single crystal thin film side of the support. In otherwords, the tensile stress produced by the tensile stress film and thecompressive stress by the piezoelectric single crystal thin film are inbalance in the support.

The electrode film preferably is an IDT electrode.

Methods for manufacturing a piezoelectric device according to otherpreferred embodiments of the present invention produce a piezoelectricdevice having a support and a piezoelectric single crystal thin filmbonded onto the support while solving the problems described above.

A manufacturing method of a piezoelectric device according to apreferred embodiment of the present invention includes at least an ionimplantation step, a stress layer formation step, a support formationstep, and an isolation formation step. The ion implantation step is astep of implanting an ionized element into a piezoelectric singlecrystal substrate in a way that a concentration peak of the implantedelement is formed in the piezoelectric single crystal substrate. Thesupport formation step is a step of forming a support on the ionimplantation plane side of the piezoelectric single crystal substrate.The stress layer formation step is a step of forming a stress layer thatcauses the surface on the piezoelectric single crystal thin film side ofthe support contract. The isolation formation step is a step ofisolating some amount of the piezoelectric single crystal substrate atthe concentration peak of the implanted element as the isolation planeto form the piezoelectric single crystal thin film on the support.

In this manufacturing method, a stress layer is present while thepiezoelectric thin film is formed on the support in the isolationformation step. During this step, the stress layer causes the surface onthe piezoelectric single crystal thin film side of the support contract.In other words, the contraction stress produced by the stress layer andthe compressive stress by the piezoelectric single crystal thin film arein balance in the support.

The driving force that induces isolation in the isolation formation stepof this manufacturing method is therefore gasification of the implantedionized element rather than the compressive stress to the isolationplane produced by the piezoelectric single crystal thin film. Thisprevents the degradation of the surface roughness of the piezoelectricsingle crystal thin film. Furthermore, the compressive stress producedby the piezoelectric single crystal thin film is no longer localized inthe isolation plane, and the cracking of the support that could occurafter isolation is prevented.

The manufacturing method of a piezoelectric device configured in thisway is therefore free of the degradation of the surface roughness of thepiezoelectric single crystal thin film and the cracking of the support.

In the stress layer formation step, a compressive stress film forcompressing the surface on the piezoelectric single crystal thin filmside of the support is preferably formed as the stress layer on the backside of the support, which is opposite to the surface on thepiezoelectric single crystal thin film side.

In this manufacturing method, a compressive stress film is preferablypresent on the back of the support, which is opposite to the surface onthe piezoelectric single crystal thin film side, while the piezoelectricthin film is formed on the support in the isolation formation step.During this step, the compressive stress film compresses the surface onthe piezoelectric single crystal thin film side of the support. In otherwords, the compressive stress produced by the compressive stress filmand that by the piezoelectric single crystal thin film are in balance inthe support.

In the stress layer formation step, an ion-implanted layer is preferablyformed as the stress layer on the back side of the support, which isopposite to the surface on the piezoelectric single crystal thin filmside.

In this manufacturing method, the ion-implanted layer compresses thesurface on the piezoelectric single crystal thin film side of thesupport after the isolation formation step. In other words, thecompressive stress produced by the ion-implanted layer and that by thepiezoelectric thin film are in balance in the support.

The support formation step is preferably carried out after the stresslayer formation step, and in the stress layer formation step, a tensilestress film for pulling the piezoelectric single crystal thin film ispreferably formed as the stress layer on the ion implantation plane sideof the piezoelectric single crystal substrate.

In this manufacturing method, a tensile stress film and a single-crystalpiezoelectric thin film are stacked on the front of the support in thisorder in the isolation formation step. During this step, the tensilestress film pulls the piezoelectric thin film to compress the surface onthe piezoelectric single crystal thin film side of the support. In otherwords, the tensile stress produced by the tensile stress film and thecompressive stress by the piezoelectric thin film are in balance in thesupport.

A method for manufacturing a piezoelectric device according to apreferred embodiment of the present invention preferably includes atleast an electrode film formation step. The electrode film formationstep is a step of forming an IDT (Interdigital Transducer) electrodefilm on the piezoelectric single crystal thin film formed on the frontof the support.

A method for manufacturing a piezoelectric device according to apreferred embodiment of the present invention includes at least asacrificial layer formation step, an exposure step, and a sacrificiallayer removal step. The sacrificial layer formation step is a step offorming a sacrificial layer in a space defined to later serve as a voidlayer existing between the piezoelectric single crystal thin film andthe support. The exposure step is a step of partially exposing thesacrificial layer on the front side of the piezoelectric thin film byetching the piezoelectric crystal thin film to form a hole therethrough.The sacrificial layer removal step is a step of removing the sacrificiallayer through the hole.

Piezoelectric devices produced by this manufacturing method preferablyinclude a membrane structure. In this manufacturing method, a tensilestress film and a single-crystal piezoelectric thin film are stacked inthis order in the isolation formation step on the surface of thesupporting layer and the sacrificial layer of the support. During thisstep, the tensile stress film compresses the surface on thepiezoelectric single crystal thin film side of the support and of thesacrificial layer. In other words, the tensile stress produced by thetensile stress film and the compressive stress by the piezoelectric thinfilm are in balance in the support.

One of the advantageous effects of a preferred embodiment of the presentinvention is to prevent the degradation of the surface roughness of thepiezoelectric single crystal thin film and the cracking of the support.

The above and other elements, features, steps, characteristics andadvantages of the present invention will become more apparent from thefollowing detailed description of the preferred embodiments withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1D are schematic cross-sectional diagrams illustrating themanufacturing steps of a piezoelectric device according to JapaneseUnexamined Patent Application Publication No. 2002-534886.

FIG. 2A is a schematic diagram illustrating a piezoelectric substratewarped by the action of a piezoelectric thin film formed by ionimplantation; and FIG. 2B is a schematic diagram illustrating asupporting substrate warped by the action of the piezoelectric thin filmafter an isolation step.

FIG. 3 is a flowchart illustrating the manufacturing method ofpiezoelectric devices according to Preferred Embodiment 1 of the presentinvention.

FIGS. 4A and 4B are schematic cross-sectional diagrams illustrating someof the manufacturing steps of piezoelectric devices presented in FIG. 3.

FIGS. 5A-5C are schematic cross-sectional diagrams illustrating some ofthe manufacturing steps of piezoelectric devices presented in FIG. 3.

FIG. 6A is a schematic diagram illustrating a piezoelectric singlecrystal substrate warped by the action of a piezoelectric thin filmformed by ion implantation; FIG. 6B is a schematic diagram illustratinga supporting substrate after an isolation step with no compressivestress film, which supporting substrate is warped by the action of thepiezoelectric thin film; FIG. 6C is a schematic diagram illustrating asupporting substrate after an isolation step following the formation ofa compressive stress film, which supporting substrate is free of warpagebecause of the presence of the compressive stress film.

FIGS. 7A and 7B are schematic cross-sectional diagrams illustrating someof the manufacturing steps of piezoelectric devices presented in FIG. 3.

FIGS. 8A and 8B are schematic cross-sectional diagrams illustrating someof the manufacturing steps of piezoelectric devices presented in FIG. 3.

FIG. 9 is a flowchart illustrating the manufacturing method ofpiezoelectric devices according to Preferred Embodiment 2 of the presentinvention.

FIGS. 10A-10C are schematic cross-sectional diagrams illustrating someof the manufacturing steps of piezoelectric devices presented in FIG. 9.

FIG. 11 is a schematic diagram illustrating a supporting substrate afteran isolation step following the step of forming a tensile stress filmindicated in FIG. 9, which supporting substrate is free of warpagebecause of the presence of the tensile stress film.

FIGS. 12A and 12B are schematic cross-sectional diagrams illustratingsome of the manufacturing steps of piezoelectric devices presented inFIG. 9.

FIGS. 13A and 13B are schematic cross-sectional diagrams illustratingsome of the manufacturing steps of piezoelectric devices presented inFIG. 9.

FIG. 14 is a flowchart illustrating the manufacturing method ofpiezoelectric devices according to Preferred Embodiment 3 of the presentinvention.

FIGS. 15A-15D are schematic cross-sectional diagrams illustrating someof the manufacturing steps of piezoelectric devices presented in FIG.14.

FIG. 16 is a schematic diagram illustrating a supporting substrate afteran isolation step following the step of forming a tensile stress filmindicated in FIG. 14, which supporting substrate is free of warpagebecause of the presence of the tensile stress film.

FIG. 17 is a schematic cross-sectional diagram illustrating one of themanufacturing steps of piezoelectric devices presented in FIG. 14.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The following describes the manufacturing method of piezoelectricdevices according to preferred embodiments of the present invention withreference to drawings. In the following description, a method formanufacturing surface acoustic wave devices is described as anillustrative manufacturing method of piezoelectric devices, for example.

FIG. 3 is a flowchart illustrating the manufacturing method ofpiezoelectric devices according to Preferred Embodiment 1 of the presentinvention. FIGS. 4A, 4B, 5A-5C, 7A, 7B, 8A and 8B are schematiccross-sectional diagrams illustrating the manufacturing steps ofpiezoelectric devices according to Preferred Embodiment 1. FIG. 6A is aschematic diagram illustrating a piezoelectric single crystal substratewarped by the action of a piezoelectric thin film formed by ionimplantation. FIG. 6B is a schematic diagram illustrating a supportingsubstrate after an isolation step with no compressive stress film, whichsupporting substrate is warped by the action of the piezoelectric thinfilm. FIG. 6C is a schematic diagram illustrating a supporting substrateafter an isolation step following the formation of a compressive stressfilm, which supporting substrate is free of warpage because of thepresence of the compressive stress film.

The first step is to prepare a piezoelectric single crystal substrate 1having a predetermined thickness as illustrated in FIG. 4A. A supportingsubstrate 50 having a predetermined thickness, illustrated later in FIG.5A, is also prepared. The piezoelectric single crystal substrate 1preferably is a lithium tantalate substrate, and the supportingsubstrate 50 preferably is a Si substrate. It is not essential that thepiezoelectric single crystal substrate 1 be a lithium tantalatesubstrate; it may be a lithium niobate substrate, a lithium tetraboratesubstrate, a langasite substrate, or a potassium niobate substrate, forexample. Likewise, it is not essential that the supporting substrate 50be a Si substrate; glass or other ceramic materials, quartz, sapphire,and similar materials may also be used, for example. Preferably, thesame material as that of the piezoelectric substrate is used becausethis ensures that the two substrates have an equal coefficient of linearexpansion.

Hydrogen ions are then implanted into the piezoelectric single crystalsubstrate 1 from the front 12 side in a way that an ion-implantedportion 100 is formed in the piezoelectric single crystal substrate 1 asillustrated in FIG. 4B (S101 in FIG. 3). When the piezoelectric singlecrystal substrate 1 is a lithium tantalate substrate, for example,hydrogen ion implantation with an acceleration energy of about 150 KeVand a dose of about 1.0×10¹⁷ atoms/cm² produces a hydrogen-containingportion at a depth of about 1 μm from the front 12, thus forming theion-implanted portion 100. This ion-implanted portion 100 is theconcentration peak of the ionized element implanted into thepiezoelectric single crystal substrate 1. Preferably, the thickness ofthe piezoelectric single crystal substrate 1 is at least 10 times thedepth of the hydrogen ion layer because a thickness less than 10 timesthis depth causes the piezoelectric single crystal substrate 1 to beexcessively warped.

When the raw material of the piezoelectric single crystal substrate 1 isnot a lithium tantalate substrate, the conditions of ion implantationare adjusted depending on the specific substrate used.

The supporting substrate 50 is then bonded to the piezoelectric singlecrystal substrate 1 as illustrated in FIG. 5A (S102 in FIG. 3). Thesupporting substrate 50 corresponds to the support referred to in thedescription of various preferred embodiments of the present invention.

This bonding operation can be done by direct bonding techniques such asbonding after activation or hydrophilization, or bonding usinginterdiffusion through a metal layer, for example. Although in thepresent preferred embodiment the supporting substrate 50 preferably isbonded to the piezoelectric single crystal substrate 1, it is possiblein practical implementation that the supporting substrate 50 is formedon the piezoelectric single crystal substrate 1 by film formation or asimilar process.

The ion implantation in this ion implantation step S101 causes thepiezoelectric single crystal substrate 1 to be warped with theion-implanted portion 100 side of the piezoelectric single crystalsubstrate 1 curved outwards as illustrated in FIG. 6A. This type ofwarpage occurs because the implanted ionized element causes the crystallattice spacing of the piezoelectric material to extend in theion-implanted portion of the piezoelectric single crystal substrate 1.

When the piezoelectric single crystal substrate 1 is in such a warpedshape, bonding the substrate to the supporting substrate 50 would resultin the piezoelectric material existing on the surface 12 on theion-implanted portion 100 side adhering to the supporting substrate 50with its crystal lattice spacing longer than that before ionimplantation. Due to the piezoelectric thin film 10, the isolation inthe isolation formation step after bonding to the supporting substrate50 at the ion-implanted portion as the isolation plane thereforegenerates a compressive stress that compresses the back 15 of thesupporting substrate 50, which is opposite to the surface 14 on thepiezoelectric thin film 10 side, thus making the supporting substrate 50after isolation warped with the piezoelectric thin film 10 side curvedoutwards as illustrated in FIG. 6B.

To prevent this, a compressive stress film 90 is formed on the back 15of the supporting substrate 50, which is opposite to the surface 14 onthe piezoelectric single crystal substrate 1 side, as illustrated inFIG. 5B (S103 in FIG. 3). The compressive stress film 90 is a film thatcompresses the surface 14 on the piezoelectric single crystal substrate1 side of the supporting substrate 50, i.e., a stress layer that causesthe surface 14 on the piezoelectric single crystal substrate 1 side ofthe supporting substrate 50 to contract. Non-limiting examples ofmaterials used to make the compressive stress film 90 preferably includesilicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zincoxide, and tantalum oxide. The compressive stress film 90 is formed onthe back 15 of the supporting substrate 50, which is opposite to thesurface 14 on the piezoelectric single crystal substrate 1 side,preferably by vapor deposition, sputtering, CVD, or a similar method,for example. Regardless of what film formation method is used, theconditions of film formation, such as materials and film thickness, areselected in a way that the formed film compresses the surface 14 on thepiezoelectric single crystal substrate 1 side of the supportingsubstrate 50.

The surface 14 of the supporting substrate 50 corresponds to the surfaceon the piezoelectric single crystal thin film side of the supportreferred to in the description of various preferred embodiments of thepresent invention.

The joined body of the piezoelectric single crystal substrate 1 and thesupporting substrate 50 illustrated in FIG. 5B is then heated (forexample, to about 500° C. in the present preferred embodiment) toinitiate isolation at the ion-implanted portion 100 as the isolationplane (S104 in FIG. 3). The heating temperature in the isolationformation step S104 can be lowered with heating under reduced pressure.

After the isolation formation step S104, the supporting substrate 50 hasa single-crystal piezoelectric thin film 10 on its front 14 asillustrated in FIG. 5C.

During the isolation formation step S104, the supporting substrate 50has a piezoelectric thin film 10 formed on its front 14 with acompressive stress film 90 present on its back 15 as illustrated in FIG.6C. The compressive stress film 90 compresses the surface 14 on thepiezoelectric single crystal substrate 1 side of the supportingsubstrate 50. In other words, the compressive stress produced by thecompressive stress film 90 and that by the piezoelectric thin film 10are in balance in the supporting substrate 50. As a result, thesupporting substrate 50 is free of warpage and able to remain flat.

The driving force that induces isolation in the isolation formation stepis therefore gasification of the implanted ionized element rather thanthe compressive stress to the isolation plane produced by thepiezoelectric single film 10. This prevents the degradation of thesurface roughness of the piezoelectric thin film 10. An experiment hasrevealed that the manufacturing method according to Japanese UnexaminedPatent Application Publication No. 2002-534886, which does not include astep for forming a compressive stress film 90, results in a surfaceroughness Ra of 50 nm to 100 nm, whereas the manufacturing methodaccording to the present preferred embodiment, which includes a step forforming a compressive stress film 90, achieves an improved surfaceroughness Ra of about 10 nm to about 20 nm, for example. Furthermore,the compressive stress produced by the piezoelectric thin film 10 is nolonger localized in the isolation plane, and the cracking of thesupporting substrate 50 that could occur after isolation is prevented.

The manufacturing method of piezoelectric devices according to thepresent preferred embodiment is therefore free of the degradation of thesurface roughness of the piezoelectric thin film 10 and the cracking ofthe supporting substrate 50.

In addition to this, the piezoelectric thin film 10 is a single-crystalthin film and thus has higher piezoelectricity than polycrystalline thinfilms formed by sputtering, vapor deposition, CVD, or a similar method.The crystal orientation of the piezoelectric thin film 10 is inheritedfrom the piezoelectric single crystal substrate 1; the use of apiezoelectric single crystal substrate 1 having a crystal orientationright for the desired characteristics of the piezoelectric devices leadsto a piezoelectric thin film 10 being formed with a crystal orientationright for the characteristics. Furthermore, the formation process of thesingle-crystal thin film preferably includes ion implantation, bonding,and isolation, and thus more than one piezoelectric thin film 10 can beformed from one piezoelectric single crystal substrate 1, and thesingle-crystal piezoelectric material can be conserved.

Although in the present preferred embodiment a compressive stress film90 is preferably formed on the back 15 of the supporting substrate 50,which is opposite to the surface 14 on the piezoelectric single crystalsubstrate 1 side, in the compressive stress film formation step S103, itis possible in practical implementation that hydrogen ions are implantedinto the supporting substrate 50 from the back 15 side in a way that anion-implanted layer similar to the ion-implanted portion 100 is formedin the supporting substrate 50. In this case, the surface 14 on thepiezoelectric single crystal substrate 1 side of the supportingsubstrate 50 is compressed by this ion-implanted layer. In other words,the compressive stress produced by the ion-implanted layer and that bythe piezoelectric thin film 10 are in balance in the supportingsubstrate 50. This approach also causes the supporting substrate 50 tobe free of warpage and able to remain flat and thus has similar effectsto the manufacturing method according to the present preferredembodiment.

The surface of the piezoelectric thin film 10 formed by isolation isthen polished and planarized by CMP or a similar treatment (S105 in FIG.3). The resulting surface roughness is preferably about 0.5 nm or less,for example, when measured as an arithmetic mean roughness Ra.

The next step is to form upper electrodes 60A and 60B and an IDT(Interdigital Transducer) electrode 60C having a predetermined thicknesson the surface of the piezoelectric thin film 10 from Al (aluminum) or asimilar material as illustrated in FIG. 7A (S106 in FIG. 3). The upperelectrodes 60A and 60B and the IDT electrode 60C correspond to theelectrode film referred to in the description of various preferredembodiments of the present invention.

It is not essential that the electrodes 60A to 60C be made of Al.Alternatively, a layer of or a laminate including more than one layer ofAl, W, Mo, Ta, Hf, Cu, Pt, Ti, Au, and similar elements may be useddepending on the desired specifications of the devices.

An insulating film 70 is then formed on the surface of the piezoelectricthin film 10 and the electrodes 60A to 60C as illustrated in FIG. 7B toprotect these piezoelectric thin film 10 and electrodes 60A to 60C (S107in FIG. 3).

The regions of the insulating film 70 at which the upper electrodes 60Aand 60B are to be exposed are then removed by etching or a similarprocess, forming openings 82A and 82B as illustrated in FIG. 8A (S108 inFIG. 3).

External terminals are then formed as illustrated in FIG. 8B (S109 inFIG. 3). More specifically, bump pads 61A and 61B are formed on theupper electrodes 60A and 60B, and bumps 62A and 62B are formed on thesebump pads 61A and 61B.

Finally, the thin-film piezoelectric devices formed on the supportingsubstrate 50 are diced into separate devices in a dicing step, and eachdevice is packaged using a molding die. As thin-film piezoelectricdevices are fabricated in this way, a batch of thin-film piezoelectricdevices can be simultaneously produced. The use of the present preferredembodiment, in which a batch of thin-film piezoelectric devices can besimultaneously produced, therefore significantly reduces themanufacturing cost of thin-film piezoelectric devices.

As illustrated in FIG. 8B, a piezoelectric device produced by thismanufacturing method has a supporting substrate 50, a single-crystalpiezoelectric thin film 10 formed on the supporting substrate 50 byisolation from a piezoelectric single crystal substrate 1 containingions implanted thereinto at the ion-implanted portion 100, thepiezoelectric thin film 10 bonded to the supporting substrate 50, and anIDT electrode film 60C formed on the piezoelectric thin film 10. Thispiezoelectric device further includes a compressive stress film 90formed on the back of the supporting substrate 50, which is opposite tothe surface on the piezoelectric thin film 10 side, to compress thesurface on the piezoelectric thin film 10 side of the supportingsubstrate 50. The compressive stress film 90 is formed on the supportingsubstrate 50 side with respect to the piezoelectric thin film 10 andcauses the surface on the piezoelectric thin film 10 side of thesupporting substrate 50 to contract.

In the present preferred embodiment, the compressive stress produced bythe compressive stress film 90 and that by the piezoelectric thin film10 are in balance after the isolation formation step. The driving forcethat induces isolation in the isolation formation step for theproduction of piezoelectric devices having the above configuration istherefore gasification of the implanted ionized element rather than thecompressive stress to the isolation plane produced by the piezoelectricsingle crystal thin film 10. Piezoelectric devices according to thepresent preferred embodiment can therefore be manufactured withoutdegradation of the surface roughness of the piezoelectric thin film 10or cracking of the supporting substrate 50.

The following describes the manufacturing method of piezoelectricdevices according to Preferred Embodiment 2 of the present inventionwith reference to drawings. In the following description, a method formanufacturing surface acoustic wave devices is detailed as anillustrative manufacturing method of piezoelectric devices.

FIG. 9 is a flowchart illustrating the manufacturing method ofpiezoelectric devices according to Preferred Embodiment 2. FIGS.10A-10C, 12A, 12B, 13A and 13B show schematic cross-sectional diagramsillustrating the manufacturing steps of piezoelectric devices presentedin FIG. 9. FIG. 11 is a schematic diagram illustrating a supportingsubstrate after an isolation step following the formation of a tensilestress film. This supporting substrate is free of warpage because of thepresence of the tensile stress film.

The manufacturing method of piezoelectric devices according to thepresent preferred embodiment is different from that described inPreferred Embodiment 1 in that a step of forming a tensile stress film(S202) is included and the bonding step (S203) follows it. This meansthat S201 and S204 to S209 in FIG. 9 are preferably the same as S101 andS104 to S109 in FIG. 3 detailed in Preferred Embodiment 1, respectively.

More specifically, the first step is to prepare a piezoelectric singlecrystal substrate 1 that contains ions implanted thereinto in step S201.

A tensile stress film 91 is then formed on the surface on theion-implanted portion 100 side of the piezoelectric single crystalsubstrate 1 as illustrated in FIG. 10A (S202 in FIG. 9). The surface ofthe tensile stress film 91 is then planarized by CMP or a similartreatment. The tensile stress film 91 is a film for compressing thesurface 14 on the piezoelectric single crystal substrate 1 side of thesupporting substrate 50, i.e., a stress layer that causes the surface 14on the piezoelectric single crystal substrate 1 side of the supportingsubstrate 50 to contract. Non-limiting examples of materials used tomake the tensile stress film 91 preferably include silicon oxide,silicon nitride, aluminum oxide, aluminum nitride, zinc oxide, andtantalum oxide. The tensile stress film 91 is formed on the surface 12on the ion-implanted portion 100 side of the piezoelectric singlecrystal substrate 1 preferably by vapor deposition, sputtering, CVD, ora similar method. Regardless of what film formation method is used, theconditions of film formation, such as materials and film thickness, areselected in a way that the formed film pulls the surface 14 on thepiezoelectric single crystal substrate 1 side of the supportingsubstrate 50.

The supporting substrate 50 is then bonded to the piezoelectric singlecrystal substrate 1 as illustrated in FIG. 10B (S203 in FIG. 9). Thisbonding method is preferably the same as in Preferred Embodiment 1.

The joined body of the piezoelectric single crystal substrate 1 and thesupporting substrate 50 illustrated in FIG. 10C is then heated(preferably to about 500° C. in this preferred embodiment) to initiateisolation at the ion-implanted portion 100 as the isolation plane (S204in FIG. 9). This isolation method is preferably the same as in PreferredEmbodiment 1.

After this isolation formation step S204, the supporting substrate 50includes the tensile stress film 91 and a single-crystal piezoelectricthin film 10, stacked in this order, on its front 14. The tensile stressfilm 91 pulls the piezoelectric thin film 10 to compress the surface 14on the piezoelectric single crystal substrate 1 side of the supportingsubstrate 50 as illustrated in FIG. 11. In other words, the tensilestress produced by the tensile stress film 91 and the compressive stressby the piezoelectric thin film 10 are in balance in the supportingsubstrate 50. The present preferred embodiment, therefore, also ensuresthat the supporting substrate 50 after isolation is free of warpage andable to remain flat.

The manufacturing method of piezoelectric devices according to thepresent preferred embodiment therefore has similar effects to thataccording to Preferred Embodiment 1.

After all the steps following the isolation formation step S204, apiezoelectric device having the structure illustrated in FIG. 13B isobtained. This piezoelectric device includes a supporting substrate 50,a single-crystal piezoelectric thin film 10 formed on the supportingsubstrate 50 by isolation from a piezoelectric single crystal substrate1 containing ions implanted thereinto at the ion-implanted portion 100,the piezoelectric thin film 10 bonded to the supporting substrate 50,and an IDT electrode film 60C formed on the piezoelectric thin film 10.This piezoelectric device further includes a tensile stress film 91disposed between the piezoelectric thin film 10 and the supportingsubstrate 50 to pull the piezoelectric thin film 10. The tensile stressfilm 91 is arranged on the supporting substrate 50 side with respect tothe piezoelectric thin film 10 and causes the surface on thepiezoelectric thin film 10 side of the supporting substrate 50 tocontract.

In the present preferred embodiment, the tensile stress produced by thetensile stress film 91 and the compressive stress by the piezoelectricthin film 10 are in balance after the isolation formation step. Thedriving force that induces isolation in the isolation formation step forthe production of piezoelectric devices having the above configurationis therefore gasification of the implanted ionized element rather thanthe compressive stress to the isolation plane produced by thepiezoelectric single crystal thin film 10. Piezoelectric devicesaccording to the present preferred embodiment can therefore bemanufactured without degradation of the surface roughness of thepiezoelectric thin film 10 or cracking of the supporting substrate 50.

The following describes the manufacturing method of piezoelectricdevices according to Preferred Embodiment 3 of the present inventionwith reference to drawings.

FIG. 14 is a flowchart illustrating the manufacturing method ofpiezoelectric devices according to Preferred Embodiment 3. FIGS. 15A-15Dand 17 show schematic cross-sectional diagrams illustrating themanufacturing steps of piezoelectric devices presented in FIG. 14. FIG.16 is a schematic diagram illustrating a supporting substrate after anisolation step following the step of forming a tensile stress film. Thesupporting substrate is free of warpage because of the presence of thetensile stress film. In the following description, a method formanufacturing piezoelectric devices including a membrane structure, suchas plate wave devices (see FIG. 17), is detailed as an illustrativemanufacturing method of piezoelectric devices.

Steps S301, S307 to S309, and S312 of the manufacturing method ofpiezoelectric devices according to the present preferred embodiment,indicated in FIG. 14, are the same as steps S201, S205 to S207, and S209in FIG. 9. The other steps (S302 to S306, S310, and S311) are different.

The first step is to prepare a piezoelectric single crystal substrate 1that contains ions implanted thereinto in step S301.

A sacrificial layer 30 having a predetermined thickness is then formedon the surface 12 on the ion-implanted portion 100 side of thepiezoelectric single crystal substrate 1 (S302 in FIG. 14). Morespecifically, the sacrificial layer 30 is preferably selected from metalfilms such as Ni, Cu, and Al, insulating films made of SiO₂, ZnO, PSG(phosphosilicate glass) or the like, organic films, and other films asappropriate for the given conditions. The sacrificial layer 30 is formedas a film occupying a space defined on the front of the supportingsubstrate 50 to later serve as a void layer 80 (i.e., the space beneaththe vibrating region of the resulting piezoelectric thin film 10, atwhich the thin film serves as a piezoelectric device, and beneath holes81A and 81B) preferably by vapor deposition, sputtering, CVD, spincoating, or a similar method. It is possible in practical implementationthat a tensile stress film is formed as the sacrificial layer 30.

A supporting layer 40 having a predetermined thickness is then formed onthe surface 12 on the ion-implanted portion 100 side of thepiezoelectric single crystal substrate 1 as illustrated in FIG. 15A(S303 in FIG. 14). The supporting layer 40 is made of an insulatingmaterial, and any kind of insulating material can be used as long as itis based on an inorganic substance such as silicon oxide or nitride,aluminum oxide, or PSG or an organic substance such as resin and ishighly resistant to the gaseous and/or liquid etchant used to remove thesacrificial layer 30. The supporting layer 40 is formed as a filmcovering a specific area of the front of the supporting substrate 50 (anarea excluding the area occupied by the sacrificial layer 30) preferablyby vapor deposition, sputtering, CVD, spin coating, or a similar method.In other words, this supporting layer 40 is formed beneath the staticregion of the resulting piezoelectric thin film 10, at which the thinfilm does not serve as a piezoelectric device. The supporting layer 40is then planarized until its thickness matches the desired depth of thevoid layer 80, which later serves as the hollow region of the membrane.

Preferably, the material of the supporting layer 40 is determined takinginto account the relationship between its coefficient of linearexpansion and that of the piezoelectric single crystal substrate 1and/or the sacrificial layer 30.

A tensile stress film 91 is then formed on the surface of thesacrificial layer 30 and the supporting layer 40 on the piezoelectricsingle crystal substrate 1 as illustrated in FIG. 15B (S304 in FIG. 14).The surface of the tensile stress film 91 is then planarized by CMP or asimilar treatment. The formation method of the tensile stress film 91 isthe same as in S202 in FIG. 9.

A supporting substrate 50 is then bonded to the surface of the tensilestress film 91 on the piezoelectric single crystal substrate 1 asillustrated in FIG. 15C (S305 in FIG. 14). This bonding method is thesame as in Preferred Embodiment 2.

The joined body of the piezoelectric single crystal substrate 1 and thesupporting substrate 50 illustrated in FIG. 15C is then heated(preferably to about 500° C. in the present preferred embodiment, forexample) to initiate isolation at the ion-implanted portion 100 as theisolation plane (S306 in FIG. 14). This isolation method is the same asin Preferred Embodiment 2.

After this isolation formation step S306, the sacrificial layer 30 andthe supporting layer 40 on the supporting substrate 50 have asingle-crystal piezoelectric thin film 10 on their surface 14′ (see FIG.16). The tensile stress film 91 compresses the surface 14′ of thesacrificial layer 30 and the supporting layer 40 on the supportingsubstrate 50 as illustrated in FIG. 16. In other words, the tensilestress produced by the tensile stress film 91 and the compressive stressby the piezoelectric thin film 10 are in balance in the supportingsubstrate 50. The present preferred embodiment, therefore, also ensuresthat the supporting substrate 50 is free of warpage and able to remainflat.

The manufacturing method of piezoelectric devices according to thepresent preferred embodiment therefore has similar effects to thataccording to Preferred Embodiment 1.

Then, polishing is performed (S307), upper electrodes 60A and 60B and anIDT electrode 60C are formed as illustrated in FIG. 17 (S308), and aninsulating film is formed (S309). These steps are carried out in thesame way as in the manufacturing method according to PreferredEmbodiment 2.

After photolithographic patterning of a resist film, a gaseous etchantis introduced to form holes 81A and 81B through which the sacrificiallayer 30 is partially exposed on the front side of the piezoelectricthin film 10 (S310 in FIG. 14).

A gaseous or liquid etchant is then introduced through the holes 81A and81B to remove the sacrificial layer 30 (S311 in FIG. 14). This turns thespace occupied by the sacrificial layer 30 into a void layer 80 asillustrated in FIG. 17.

External terminals are then formed in the same way as in themanufacturing method of piezoelectric devices according to PreferredEmbodiment 2 (S312 in FIG. 14).

Finally, the thin-film piezoelectric devices formed on the supportingsubstrate 50 are diced into separate devices in a dicing step, and eachdevice is packaged using a molding die. As a result, piezoelectricdevices having the structure illustrated in FIG. 17 are obtained. Eachof these piezoelectric devices includes a support including a supportingsubstrate 50, a void layer 80, and a supporting layer 40, asingle-crystal piezoelectric thin film 10 formed on the support byisolation from a piezoelectric single crystal substrate 1 containingions implanted thereinto at the ion-implanted portion 100, thepiezoelectric thin film 10 bonded to the support, and an IDT electrodefilm 60C formed on the piezoelectric thin film 10. This piezoelectricdevice further includes a tensile stress film 91 arranged between thepiezoelectric thin film 10 and the support to pull the piezoelectricthin film 10. The tensile stress film 91 is located on the support sidewith respect to the piezoelectric thin film 10 and causes the surface onthe piezoelectric thin film 10 side of the support to contract.

In this preferred embodiment, the tensile stress produced by the tensilestress film 91 and the compressive stress by the piezoelectric thin film10 are in balance after the isolation formation step. The driving forcethat induces isolation in the isolation formation step for theproduction of piezoelectric devices having the above configuration istherefore gasification of the implanted ionized element rather than thecompressive stress to the isolation plane produced by the piezoelectricsingle crystal thin film 10. Piezoelectric devices according to thepresent preferred embodiment can therefore be manufactured withoutdegradation of the surface roughness of the piezoelectric thin film 10or cracking of the supporting substrate 50.

Although the description of the present preferred embodiment takes platewave devices as an example, manufacturing methods according to thepresent invention can also be applied to other devices that are based ona piezoelectric single crystal thin film and have a membrane, such asgyroscopic devices, RF switches, and vibrational electric generators.

Furthermore, the descriptions of the above preferred embodiments shouldbe construed as being illustrative in all respects and not restrictive.The scope of the present invention is defined by the claims rather thanthe above preferred embodiments. It is also intended that the scope ofthe present invention includes equivalents of the claims and allmodifications that fall within the claims.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

What is claimed is:
 1. A piezoelectric device comprising: a support; apiezoelectric single crystal thin film located on the support and madeof a material formed by isolation from a piezoelectric single crystalsubstrate containing an ionized element implanted thereinto at aconcentration peak of the ionized implanted element as an isolationplane; an electrode film located on the piezoelectric single crystalthin film; and a stress layer that causes a surface of the support tocontract; wherein the surface of the support is on a side of the supporton which the piezoelectric single crystal thin film is located and thesurface of the support is extended by the ionized implanted element. 2.The piezoelectric device according to claim 1, wherein the stress layeris a compressive stress film located on a back side of the support,which is opposite to the surface on the piezoelectric single crystalthin film side, to compress the surface on the piezoelectric singlecrystal thin film side of the support.
 3. The piezoelectric deviceaccording to claim 2, wherein the compressive stress film is made ofsilicon oxide, silicon nitride, zinc oxide, tantalum oxide, aluminumnitride, or aluminum oxide.
 4. The piezoelectric device according toclaim 1, wherein the stress layer is a tensile stress film arrangedbetween the piezoelectric single crystal thin film and the support so asto pull the piezoelectric single crystal thin film.
 5. The piezoelectricdevice according to claim 4, wherein the tensile stress film is made ofsilicon oxide, silicon nitride, aluminum nitride, or aluminum oxide. 6.The piezoelectric device according to claim 1, wherein the supportincludes a supporting layer arranged to support the piezoelectric singlecrystal thin film and a void layer located between the piezoelectricsingle crystal thin film and the compressive stress film.
 7. Thepiezoelectric device according to claim 1, wherein the electrode film isan interdigital terminal electrode.
 8. The piezoelectric deviceaccording to claim 1, wherein the piezoelectric device is one of a platewave device, a gyroscopic device, an RF switch, and a vibrationalelectric generator.